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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1 -0.05
2.8 0.2 1.5 0.65 -0.15
+0.1
0.95
2.9 0.2
2
0.4 +0.1 -0.05
FEATURES
* Can be driven by a 3.0-V power source * Not necessary to consider driving current because of it is high input impedance * Possible to reduce the number of parts by omitting the bias resistor * Can be used complementary with the 2SJ185
0.95
1
3
0.3
Marking
0.16 -0.06
+0.1
PART NUMBER 2SK1399
PACKAGE SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage 5 Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50 7.0 100 200 200 150 -55 to +80 -55 to +150 V V mA mA mW C C C
Gate Gate Protection Diode Marking: G12 Drain Electrode Connection 1.Source Internal 2.Gate Diode 3.Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg
Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature Note PW 10 ms, Duty Cycle 50 % Remark
Source
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14770EJ2V0DS00 (2nd edition) (Previous No.TC-2343) Date Published March 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
0 to 0.1
ORDERING INFORMATION
1.1 to 1.4
1991, 2000
2SK1399
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Drain Cut-off Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 50 V, VGS = 0 V VGS = 7.0 V, VDS = 0 V VDS = 3.0 V, ID = 1.0 A VDS = 3.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3.0 V VGS = 0 V f = 1 MHz VDD = 3.0 V ID = 20 mA VGS(on) = 3.0 V RG = 10 , RL = 150 0.9 20 1.2 38 22 14 8 7 3 15 100 30 35 40 20 MIN. TYP. MAX. 10 5.0 1.5 UNIT
A A
V mS pF pF pF ns ns ns ns
5
Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance
5
Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1 % ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D14770EJ2V0DS00
2SK1399
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 300
100 80 60 40 20 0 0
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - mW
dT - Derating Factor - %
250 200 150 100 50 0
20
40
60
80
100
120 140 160
0
30
60
90
120 150
180 210
240
Tc - Case Temperature - C
TA - Ambient Temperature - C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100
Pulse measurement
TRANSFER CHARACTERISTICS
100
ID - Drain Current - mA
80 VGS = 4.5 V
ID - Drain Current - mA
60
4.0 V
10
5
40 2.5 V
1 TA = 150C 75C 25C -25C
VDS = 3.0 V Pulse measurement
20 0 0 0.5
0.1
1
1.5
2
0.01 0
1
2
3
4
5
6
7
8
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - mS
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
1000 500 200 100 50
VDS = 3.0 V ID = 1 A
VDS = 5.0 V f = 1 kHz
1.5
1.0
20 10 1 5 10 20 50 100 200 500 1000
0.5
0
50
100
150
Tch - Channel Temperature - C
ID - Drain Current - mA
Data Sheet D14770EJ2V0DS00
3
2SK1399
RDS (on) - Drain to Source On-State Resistance -
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 ID = 100 mA 20 10 mA 10 Pulse measurement
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 50 Pulse measurement VGS = 2.5 V 20 4.0 V 10 5
2 1 0 0.6 1 2 5 10 20 60
0
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate to Source Voltage - V
ID - Drain Current - mA
4
Data Sheet D14770EJ2V0DS00
2SK1399
[MEMO]
Data Sheet D14770EJ2V0DS00
5
2SK1399
[MEMO]
6
Data Sheet D14770EJ2V0DS00
2SK1399
[MEMO]
Data Sheet D14770EJ2V0DS00
7
2SK1399
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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